An asymmetrical bulk-modified composite MOS transistor with enhanced linearity
In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ...
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| Main Author: | |
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| Other Authors: | , , , |
| Format: | article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10895/1552 |
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