An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ...

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Detalles Bibliográficos

Autor Principal:	Arnaud Maceira, Alfredo (author)
Outros autores:	Chacón Rodríguez, Alfonso (author), Miguez de Mori, Matías Rafael (author), Gak Szollosy, Joel (author), Puyol, Rafael (author)
Formato:	article
Idioma:	inglés
Publicado:	2019
Subjects:	Analog integrated circuits CMOS Linearization techniques Analog filters MOS resistor
Acceso en liña:	https://hdl.handle.net/10895/1552
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