An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ...

Olles dieđut

Furkejuvvon:
Bibliográfalaš dieđut
Váldodahkki: Arnaud Maceira, Alfredo (author)
Eará dahkkit: Chacón Rodríguez, Alfonso (author), Miguez de Mori, Matías Rafael (author), Gak Szollosy, Joel (author), Puyol, Rafael (author)
Materiálatiipa: article
Giella:eaŋgalasgiella
Almmustuhtton: 2019
Fáttát:
Liŋkkat:https://hdl.handle.net/10895/1552
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