TFET-Based Circuit Design Using the Transconductance Generation Efficiency gm/Id Method

Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices for low-power high-frequency analog integrated circuit applications (e.g., GHz operation with sub-0.1 mW power consumptio...

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Detaylı Bibliyografya

Yazar:	Barboni, Leonardo (author)
Diğer Yazarlar:	Siniscalchi, Mariana (author), Sensale Rodríguez, Berardi (author)
Materyal Türü:	article
Dil:	İngilizce
Baskı/Yayın Bilgisi:	2015
Konular:	Si-FinFETs Tunnel field effect transistors (TFET) Ultra-low power design gm/Id method One-stage common-source amplifier Two-stage operational transconductance amplifier (OTA) with Miller effect compensation Electrónica
Online Erişim:	https://hdl.handle.net/20.500.12008/42722
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