TFET-Based Circuit Design Using the Transconductance Generation Efficiency gm/Id Method
Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices for low-power high-frequency analog integrated circuit applications (e.g., GHz operation with sub-0.1 mW power consumptio...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| مؤلفون آخرون: | , |
| التنسيق: | article |
| اللغة: | الإنجليزية |
| منشور في: |
2015
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/20.500.12008/42722 |
| الوسوم: |
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
| الملخص: | Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices for low-power high-frequency analog integrated circuit applications (e.g., GHz operation with sub-0.1 mW power consumption), 2) discuss and employ a compact TFET device model in the context of the gm/Id integrated analog circuit design methodology, and 3) compare several proposed TFET technologies for such applications. The advantages of TFETs arise since these devices can operate in the sub-threshold region with larger transconductance-to-current ratio than traditional FETs, which is due to the current turn-on mechanism being interband tunneling rather than thermionic emission. Starting from technology computer-aided design and/or analytical models for Si-FinFETs, graphene nano-ribbon (GNR) TFETs and InAs/GaSb TFETs at the 15-nm gate-length node, as well as InAs double-gate TFETs at the 20-nm gate-length node, we conclude that GNR TFETs might promise larger bandwidths at low-voltage drives due to their high current densities in the sub-threshold region. Based on this analysis and on theoretically predicted properties, GNR TFETs are identified as one of the most attractive field effect transistor technologies proposed-to-date for ultra-low power analog applications. |
|---|