An All-Inversion-Region gm/ID Based Design Methodology for Radiofrequency Blocks in CMOS Nanometer Technologies
Esta tesis trata del diseño, en tecnologías nanométricas CMOS, de bloques analógicos para aplicaciones de RF, en el que se ha incorporado como base la completa exploración de todas las posibles regiones de inversión en las cuales el transistor puede ser polarizado. La herramienta fundamental ha sido...
-д хадгалсан:
| Үндсэн зохиолч: | |
|---|---|
| Формат: | doctoralThesis |
| Хэл сонгох: | англи |
| Хэвлэсэн: |
2011
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| Нөхцлүүд: | |
| Онлайн хандалт: | http://hdl.handle.net/20.500.12008/20192 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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Ижил төстэй зүйлс: An All-Inversion-Region gm/ID Based Design Methodology for Radiofrequency Blocks in CMOS Nanometer Technologies
- Design automation of CMOS OTAs using symbolic analysis and gm/ID methodology
- A gm/ID based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA
- Design and power optimization of CMOS RF Blocks operating in the moderate inversion region
- RF Power Amplifiers with Built-In Test and Calibration in Nanometer CMOS
- All inversion region design based on gm/ID : The non-linear case of a wake-up receiver radio frequency front-end
- An ASK demodulator in CMOS technology