A 110 nA pacemaker sensing channel in CMOS on silicon-on-insulator
Postprint
Wedi'i Gadw mewn:
| Prif Awdur: | |
|---|---|
| Awduron Eraill: | |
| Fformat: | article |
| Iaith: | Saesneg |
| Cyhoeddwyd: |
2002
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| Pynciau: | |
| Mynediad Ar-lein: | https://hdl.handle.net/20.500.12008/21227 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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Eitemau Tebyg: A 110 nA pacemaker sensing channel in CMOS on silicon-on-insulator
- A fully integrated physical activity sensing circuit for implantable pacemakers
- Pico-A/V range CMOS transconductors using series-parallel current division
- Low power consumption silicon photonics tuning filters based on compound microring resonators
- Design and power optimization of CMOS RF Blocks operating in the moderate inversion region
- CMOS level shifters from 0 to 18 V output
- The use of silicone as embedding material