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Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits

This paper demonstrates that fully-depleted (FD) silicon-on-insulator (SOI) technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well-known reduction of parasitic capacitances due to dielectric isolation, FD SOI MOSFETs indeed exhibit near-ideal bod...

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Autor principal: Flandre, Denis (author)
Altres autors: Colinge, J. P (author), Chen, J (author), De Ceuster, D (author), Eggermont, J. P (author), Ferreira, L (author), Gentinne, B (author), Jespers, Paul (author), Viviani, A (author), Gillon, R (author), Raskin, J. P (author), Vander Vorst, A (author), Valiente, Gabriel (author), Silveira, Fernando (author)
Format: article
Idioma:anglès
Publicat: 1999
Matèries:
ELECTRÓNICA
Accés en línia:https://hdl.handle.net/20.500.12008/20774
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author Flandre, Denis
author2 Colinge, J. P
Chen, J
De Ceuster, D
Eggermont, J. P
Ferreira, L
Gentinne, B
Jespers, Paul
Viviani, A
Gillon, R
Raskin, J. P
Vander Vorst, A
Valiente, Gabriel
Silveira, Fernando
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author_browse Chen, J
Colinge, J. P
De Ceuster, D
Eggermont, J. P
Ferreira, L
Flandre, Denis
Gentinne, B
Gillon, R
Jespers, Paul
Raskin, J. P
Silveira, Fernando
Valiente, Gabriel
Vander Vorst, A
Viviani, A
author_facet Flandre, Denis
Colinge, J. P
Chen, J
De Ceuster, D
Eggermont, J. P
Ferreira, L
Gentinne, B
Jespers, Paul
Viviani, A
Gillon, R
Raskin, J. P
Vander Vorst, A
Valiente, Gabriel
Silveira, Fernando
author_role author
collection COLIBRI
dc.creator.none.fl_str_mv Flandre, Denis
Colinge, J. P
Chen, J
De Ceuster, D
Eggermont, J. P
Ferreira, L
Gentinne, B
Jespers, Paul
Viviani, A
Gillon, R
Raskin, J. P
Vander Vorst, A
Valiente, Gabriel
Silveira, Fernando
dc.date.none.fl_str_mv 1999
2019-05-29T15:28:13Z
2019-05-29T15:28:13Z
20190528
dc.identifier.none.fl_str_mv Flandre, Denis, Colinge, J. P., Chen, J., De Ceuster, D., Eggermont, J. P., Ferreira, L., Gentinne, B., Jespers, Paul, Viviani, A., Gillon, R., Raskin, J. P., Vander Vorst, A., Valiente, Gabriel, Silveira, Fernando. Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits [en línea] Analog Integrated Circuits and Signal Processing, 1999, v. 21
https://hdl.handle.net/20.500.12008/20774
dc.language.none.fl_str_mv en
eng
dc.publisher.none.fl_str_mv Kluwer
dc.relation.none.fl_str_mv Analog Integrated Circuits and Signal Processing, 1999, v. 21
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
dc.source.none.fl_str_mv reponame:COLIBRI
instname:Universidad de la República
instacron:Universidad de la República
dc.subject.none.fl_str_mv ELECTRÓNICA
dc.title.none.fl_str_mv Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
dc.type.none.fl_str_mv Artículo
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
description This paper demonstrates that fully-depleted (FD) silicon-on-insulator (SOI) technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well-known reduction of parasitic capacitances due to dielectric isolation, FD SOI MOSFETs indeed exhibit near-ideal body factor, subthreshold slope and current drive. These assets are both theoretically and experimentally investigated. Original circuit studies then show how a basic FD SOI CMOS process allows for the mixed fabrication and operation under low supply voltage of analog, digital and microwave components with properties significantly superior to those obtained on bulk CMOS. Experimental circuit realizations support the analysis.
eu_rights_str_mv openAccess
format article
id anni_2cd818f845652f6a4daeb7f763543d58
identifier_str_mv Flandre, Denis, Colinge, J. P., Chen, J., De Ceuster, D., Eggermont, J. P., Ferreira, L., Gentinne, B., Jespers, Paul, Viviani, A., Gillon, R., Raskin, J. P., Vander Vorst, A., Valiente, Gabriel, Silveira, Fernando. Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits [en línea] Analog Integrated Circuits and Signal Processing, 1999, v. 21
instacron_str Universidad de la República
institution Universidad de la República
instname_str Universidad de la República
language eng
language_invalid_str_mv en
network_acronym_str anni
network_name_str oai-lr-anni
oai_identifier_str oai:colibri.udelar.edu.uy:20.500.12008/20774
publishDate 1999
publishDateSort 1999
publisher.none.fl_str_mv Kluwer
reponame_str COLIBRI
repository.mail.fl_str_mv
repository.name.fl_str_mv
repository_id_str
spelling Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave CircuitsFlandre, DenisColinge, J. PChen, JDe Ceuster, DEggermont, J. PFerreira, LGentinne, BJespers, PaulViviani, AGillon, RRaskin, J. PVander Vorst, AValiente, GabrielSilveira, FernandoELECTRÓNICAThis paper demonstrates that fully-depleted (FD) silicon-on-insulator (SOI) technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well-known reduction of parasitic capacitances due to dielectric isolation, FD SOI MOSFETs indeed exhibit near-ideal body factor, subthreshold slope and current drive. These assets are both theoretically and experimentally investigated. Original circuit studies then show how a basic FD SOI CMOS process allows for the mixed fabrication and operation under low supply voltage of analog, digital and microwave components with properties significantly superior to those obtained on bulk CMOS. Experimental circuit realizations support the analysis.Kluwer2019-05-29T15:28:13Z2019-05-29T15:28:13Z199920190528Artículoinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionFlandre, Denis, Colinge, J. P., Chen, J., De Ceuster, D., Eggermont, J. P., Ferreira, L., Gentinne, B., Jespers, Paul, Viviani, A., Gillon, R., Raskin, J. P., Vander Vorst, A., Valiente, Gabriel, Silveira, Fernando. Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits [en línea] Analog Integrated Circuits and Signal Processing, 1999, v. 21https://hdl.handle.net/20.500.12008/20774reponame:COLIBRIinstname:Universidad de la Repúblicainstacron:Universidad de la RepúblicaenengAnalog Integrated Circuits and Signal Processing, 1999, v. 21Las obras depositadas en el Repositorio se rigen por la Ordenanza de los Derechos de la Propiedad Intelectual de la Universidad De La República. (Res. Nº 91 de C.D.C. de 8/III/1994 – D.O. 7/IV/1994) y por la Ordenanza del Repositorio Abierto de la Universidad de la República (Res. Nº 16 de C.D.C. de 07/10/2014)info:eu-repo/semantics/openAccessoai:colibri.udelar.edu.uy:20.500.12008/207742026-04-14T10:14:54Z
spellingShingle Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
Flandre, Denis
ELECTRÓNICA
status_str publishedVersion
title Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
title_full Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
title_fullStr Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
title_full_unstemmed Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
title_short Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
title_sort Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
topic ELECTRÓNICA
url https://hdl.handle.net/20.500.12008/20774

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