Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits
This paper demonstrates that fully-depleted (FD) silicon-on-insulator (SOI) technology offers unique opportunities in the field of low-voltage, low-power CMOS circuits. Beside the well-known reduction of parasitic capacitances due to dielectric isolation, FD SOI MOSFETs indeed exhibit near-ideal bod...
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| Outros Autores: | , , , , , , , , , , , , |
| Formato: | article |
| Idioma: | inglês |
| Publicado em: |
1999
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| Acesso em linha: | https://hdl.handle.net/20.500.12008/20774 |
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